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[D-3-04] Vertical-Type 2DHG Diamond MOSFETs with a Few Micro Meter Length Trench Structure

^○M. Iwataki¹, N. Oi¹, K. Horikawa¹, S. Amano¹, T. Kageura¹, M. Inaba², A. Hiraiwa^1,3, H. Kawarada^1,3 (1.Waseda Univ. (Japan), 2.Nagoya Univ. (Japan), 3.Kagami Memorial Res. Inst. for Materials Sci. and Tech. (Japan))

https://doi.org/10.7567/SSDM.2018.D-3-04