The Japan Society of Applied Physics

10:15 〜 10:30

[D-3-05] Normally-Off 2DHG Diamond Al2O3/SiO2 MOSFETs without Deteriorating Drain Current Density

T. Yabe1, N. Oi1, J.J. Buendia1, S. Okubo1, K. Horikawa1, T. Kageura1, S. Kono1, A. Hiraiwa1, H. Kawarada1,2 (1.Waseda Univ. (Japan), 2.Kagami Memorial Research Institute for Materials Science and Technology (Japan))

https://doi.org/10.7567/SSDM.2018.D-3-05