10:15 〜 10:30

[D-3-05] Normally-Off 2DHG Diamond Al₂O₃/SiO₂ MOSFETs without Deteriorating Drain Current Density

^○T. Yabe¹, N. Oi¹, J.J. Buendia¹, S. Okubo¹, K. Horikawa¹, T. Kageura¹, S. Kono¹, A. Hiraiwa¹, H. Kawarada^1,2 (1.Waseda Univ. (Japan), 2.Kagami Memorial Research Institute for Materials Science and Technology (Japan))

https://doi.org/10.7567/SSDM.2018.D-3-05