10:15 AM - 10:30 AM
[D-3-05] Normally-Off 2DHG Diamond Al2O3/SiO2 MOSFETs without Deteriorating Drain Current Density
○T. Yabe1, N. Oi1, J.J. Buendia1, S. Okubo1, K. Horikawa1, T. Kageura1, S. Kono1, A. Hiraiwa1, H. Kawarada1,2
(1.Waseda Univ. (Japan), 2.Kagami Memorial Research Institute for Materials Science and Technology (Japan))
https://doi.org/10.7567/SSDM.2018.D-3-05