11:30 〜 11:45

[D-4-03] Normally-off H-diamond field effect transistors based on the multiple enlarged growth single crystalline diamond by microwave plasma chemical vapor deposition

^○Z. Ren¹, J. Zhang¹, J. Zhang¹, K. Su¹, Y. Hao¹ (1.Univ. of Xidian (China))

https://doi.org/10.7567/SSDM.2018.D-4-03