The Japan Society of Applied Physics

11:30 〜 11:45

[D-4-03] Normally-off H-diamond field effect transistors based on the multiple enlarged growth single crystalline diamond by microwave plasma chemical vapor deposition

Z. Ren1, J. Zhang1, J. Zhang1, K. Su1, Y. Hao1 (1.Univ. of Xidian (China))

https://doi.org/10.7567/SSDM.2018.D-4-03