RF Performance of ALD-Al<sub>2</sub>O<sub>3</sub> 2DHG Diamond MOSFETs at High Voltage Operation for High Output Power

S. Imanishi

doi:https://doi.org/10.7567/SSDM.2018.D-5-03

14:15 〜 14:30

[D-5-03] RF Performance of ALD-Al₂O₃ 2DHG Diamond MOSFETs at High Voltage Operation for High Output Power

^○S. Imanishi¹, N. Oi¹, S. Okubo¹, K. Horikawa¹, T. Kageura¹, A. Hiraiwa¹, H. Kawarada^1,2 (1.Waseda univ. (Japan), 2.The Kagami Memorial Laboratory for Materials Science and Technology (Japan))

https://doi.org/10.7567/SSDM.2018.D-5-03

2018 International Conference on Solid State Devices and Materials

[D-5-03] RF Performance of ALD-Al2O3 2DHG Diamond MOSFETs at High Voltage Operation for High Output Power

[D-5-03] RF Performance of ALD-Al₂O₃ 2DHG Diamond MOSFETs at High Voltage Operation for High Output Power