The Japan Society of Applied Physics

14:30 〜 14:45

[D-8-03] Low-temperature, high-concentration laser doping of nitrogen to 4H-SiC for low-contact-resistance fabrication

T. Kikuchi1,2, K. Imokawa1,2, A. Ikeda3, D. Nakamura1, T. Asano1, H. Ikenoue1,2 (1.Grad. Sch. of ISEE, Kyushu Univ. (Japan), 2.Dept. of Gigaphoton Next GLP, Kyushu Univ. (Japan), 3.Dept. of Computer and Info. Sci., Sojo Univ. (Japan))

https://doi.org/10.7567/SSDM.2018.D-8-03