Low-temperature, high-concentration laser doping of nitrogen to 4H-SiC for low-contact-resistance fabrication

T. Kikuchi

doi:https://doi.org/10.7567/SSDM.2018.D-8-03

14:30 〜 14:45

[D-8-03] Low-temperature, high-concentration laser doping of nitrogen to 4H-SiC for low-contact-resistance fabrication

^○T. Kikuchi^1,2, K. Imokawa^1,2, A. Ikeda³, D. Nakamura¹, T. Asano¹, H. Ikenoue^1,2 (1.Grad. Sch. of ISEE, Kyushu Univ. (Japan), 2.Dept. of Gigaphoton Next GLP, Kyushu Univ. (Japan), 3.Dept. of Computer and Info. Sci., Sojo Univ. (Japan))

https://doi.org/10.7567/SSDM.2018.D-8-03

2018 International Conference on Solid State Devices and Materials

[D-8-03] Low-temperature, high-concentration laser doping of nitrogen to 4H-SiC for low-contact-resistance fabrication