14:45 〜 15:00

[D-8-04] Investigation of grinding or mechanical polishing surface of 4H-SiC substrate

^○R. Hiraide¹, T. Okamoto², M. Haraguchi² (1.Kemet Japan CO.,LTD. (Japan), 2.FRC, Tokushima Univ. (Japan))

https://doi.org/10.7567/SSDM.2018.D-8-04