3:00 PM - 3:15 PM

[D-8-05] Stress at Interface of SiO2/4H-SiC Studied by Confocal Raman Microscopy

^○W. Fu¹, A. Kobayashi¹, H. Yano¹, S. Harada², T. Sakurai¹ (1.Univ. of Tsukuba (Japan), 2.AIST (Japan))

https://doi.org/10.7567/SSDM.2018.D-8-05