The Japan Society of Applied Physics

15:30 〜 15:45

[D-8-07 (Late News)] Investigation of bias annealing effects for normally-off GaN MOS-HFET with thin AlN barrier layer

T. Nanjo1, H. Koyama2, A. Imai1, T. Watahiki1, M. Yamamuka1 (1.Mitsubishi Electric Corporation, Advanced Technology Research & Development Center (Japan), 2.Mitsubishi Electric Corporation, High Frequency & Optical Device Works (Japan))

https://doi.org/10.7567/SSDM.2018.D-8-07