Investigation of bias annealing effects for normally-off GaN MOS-HFET with thin AlN barrier layer

T. Nanjo

doi:https://doi.org/10.7567/SSDM.2018.D-8-07

15:30 〜 15:45

[D-8-07 (Late News)] Investigation of bias annealing effects for normally-off GaN MOS-HFET with thin AlN barrier layer

^○T. Nanjo¹, H. Koyama², A. Imai¹, T. Watahiki¹, M. Yamamuka¹ (1.Mitsubishi Electric Corporation, Advanced Technology Research & Development Center (Japan), 2.Mitsubishi Electric Corporation, High Frequency & Optical Device Works (Japan))

https://doi.org/10.7567/SSDM.2018.D-8-07

2018 International Conference on Solid State Devices and Materials

[D-8-07 (Late News)] Investigation of bias annealing effects for normally-off GaN MOS-HFET with thin AlN barrier layer