Effect of Conduction Band Offset on the Gate Leakage Current for SiO<sub>2</sub>/4H-SiC (000-1) Studied by Hard X-ray Photoelectron Spectroscopy

09:30 〜 09:45

[E-3-02] Effect of Conduction Band Offset on the Gate Leakage Current for SiO₂/4H-SiC (000-1) Studied by Hard X-ray Photoelectron Spectroscopy

^○E.D. Indari^1,2, Y. Yamashita^1,2, R. Hasunuma³, K. Yamabe³ (1.NIMS (Japan), 2.Kyushu Univ (Japan), 3.Univ. of Tsukuba (Japan))