The Japan Society of Applied Physics

09:30 〜 09:45

[E-3-02] Effect of Conduction Band Offset on the Gate Leakage Current for SiO2/4H-SiC (000-1) Studied by Hard X-ray Photoelectron Spectroscopy

E.D. Indari1,2, Y. Yamashita1,2, R. Hasunuma3, K. Yamabe3 (1.NIMS (Japan), 2.Kyushu Univ (Japan), 3.Univ. of Tsukuba (Japan))

https://doi.org/10.7567/SSDM.2018.E-3-02