10:00 AM - 10:15 AM
[E-3-04] Evaluation of Electron Traps in SiN by Discharging Current Transient Spectroscopy: Verification of Validity by Comparing with Conventional DLTS
○H. Seki1, Y. Mitani1
(1.Toshiba Memory Corp. (Japan))
https://doi.org/10.7567/SSDM.2018.E-3-04