The Japan Society of Applied Physics

11:00 AM - 11:15 AM

[E-4-02] Growth of epitaxial Y2O3-doped ferroelectric HfO2 films by sputtering method and their characterization

H. Funakubo1, T. Suzkuki1, T. Mimura1, T. Shimizu1, H. Uchida2 (1.Tokyo Tech (Japan), 2.Sophia University (Japan))

https://doi.org/10.7567/SSDM.2018.E-4-02