Enhanced Growth of High Sn Concentration (Sn&gt;=10%) GeSn on Insulator by Low Temperature (~170°C) Solid-Phase Crystallization Combined with Weak Laser Irradiation

15:45 〜 16:00

[E-6-03] Enhanced Growth of High Sn Concentration (Sn>=10%) GeSn on Insulator by Low Temperature (~170°C) Solid-Phase Crystallization Combined with Weak Laser Irradiation

^○T. Sadoh¹, T. Sugino¹, K. Moto¹, R. Matsumura¹, H. Ikenoue¹, M. Miyao¹ (1.Kyushu Univ. (Japan))