9:30 AM - 10:00 AM

[E-7-02 (Invited)] HVPE growth of bulk GaN and Homoepitaxy for Device Applications

^○K. Xu^1,2 (1.Chinese Academy of Sci. (China), 2.Suzhou Nanowin Sci. and Tech. Co., Ltd. (China))

https://doi.org/10.7567/SSDM.2018.E-7-02