10:15 〜 10:30

[E-7-04] Control of Defect Formation in 4H-SiC Films Using Surface C/Si Ratio by High Speed Wafer Rotation Vertical CVD

^○Y. Daigo¹, S. Ishii¹, T. Kobayashi¹ (1.Nuflare Technology, Inc (Japan))

https://doi.org/10.7567/SSDM.2018.E-7-04