Crystal Growth of MnS buffer layer for non-polar AlN on Si (100) deposited by RF-magnetron sputtering

K. Tatejima

doi:https://doi.org/10.7567/SSDM.2018.E-7-05

10:30 〜 10:45

[E-7-05] Crystal Growth of MnS buffer layer for non-polar AlN on Si (100) deposited by RF-magnetron sputtering

^○K. Tatejima^1,2, T. Nagata², K. Ishibashi^3,2, K. Takahashi^3,2, S. Suzuki³, A. Ogura¹, T. Chikyow^2,4 (1.Meiji Univ. (Japan), 2.MANA, NIMS (Japan), 3.COMET Inc. (Japan), 4.MaDIS, NIMS (Japan))

https://doi.org/10.7567/SSDM.2018.E-7-05

2018 International Conference on Solid State Devices and Materials

[E-7-05] Crystal Growth of MnS buffer layer for non-polar AlN on Si (100) deposited by RF-magnetron sputtering