10:30 AM - 10:45 AM

[G-7-06 (Late News)] Fabrication and Evaluation of Aluminum Nitride/MOSFET Based Strain Sensor with High Gauge Factor

^○M. Zhu¹, N. Inomata¹, N. Adachi², A. Sakurai², M. Nomura², T. Ono¹ (1.Tohoku Univ. (Japan), 2.Murata Manufac. Co., Ltd. (Japan))

https://doi.org/10.7567/SSDM.2018.G-7-06