Order-of-magnitude enhancement of direct-gap photoluminescence from patterned Ge epitaxial layers on Si induced by wet chemical treatment

14:45 〜 15:00

[H-1-03] Order-of-magnitude enhancement of direct-gap photoluminescence from patterned Ge epitaxial layers on Si induced by wet chemical treatment

^○M. Yako¹, Y. Ishikawa² (1.Univ. of Tokyo (Japan), 2.Toyohashi Univ. of Tech. (Japan))