High-Speed Ge/Si Electro-Absorption Optical Modulator for High-Bandwidth Optical Interconnect

J. Fujikata

doi:https://doi.org/10.7567/SSDM.2018.H-6-01

3:15 PM - 3:30 PM

[H-6-01] High-Speed Ge/Si Electro-Absorption Optical Modulator for High-Bandwidth Optical Interconnect

^○J. Fujikata¹, M. Noguchi¹, K. Kawashita², S. Takahashi¹, M. Nishimura^2,3, H. Ono¹, D. Shimura¹, H. Takahashi¹, H. Yaegashi¹, Y. Ishikawa², T. Nakamura¹ (1.PETRA (Japan), 2.Toyohashi Univ. Tech. (Japan), 3.Univ. of Tokyo (Japan))

https://doi.org/10.7567/SSDM.2018.H-6-01

2018 International Conference on Solid State Devices and Materials

[H-6-01] High-Speed Ge/Si Electro-Absorption Optical Modulator for High-Bandwidth Optical Interconnect