Study of minority-electron transport through atomic-diffusion-bonding InGaAs/a-Ge/InGaAs interface using photodiode structures

Y. Yamada

doi:https://doi.org/10.7567/SSDM.2018.H-8-04

15:00 〜 15:15

[H-8-04] Study of minority-electron transport through atomic-diffusion-bonding InGaAs/a-Ge/InGaAs interface using photodiode structures

^○Y. Yamada¹, M. Nada¹, M. Uomoto², T. Shimatsu², F. Nakajima¹, T. Hoshi¹, H. Matsuzaki¹ (1.NTT Device Technology Labs, NTT Corporation (Japan), 2.Tohoku Univ. (Japan))

https://doi.org/10.7567/SSDM.2018.H-8-04

2018 International Conference on Solid State Devices and Materials

[H-8-04] Study of minority-electron transport through atomic-diffusion-bonding InGaAs/a-Ge/InGaAs interface using photodiode structures