Contact Resistivities at Graphene/MoS<sub>2</sub> Lateral Heterojunctions

M. Houssa

doi:https://doi.org/10.7567/SSDM.2018.M-3-02

09:30 〜 09:45

[M-3-02] Contact Resistivities at Graphene/MoS₂ Lateral Heterojunctions

^○M. Houssa¹, K. Iordanidou², A. Dabral^1,3, A. Lu⁴, G. Pourtois³, V. Afanas'ev¹, A. Stesmans¹ (1.Univ. of Leuven (Belgium), 2.Univ. of Oslo (Norway), 3.imec (Belgium), 4.AIST (Japan))

https://doi.org/10.7567/SSDM.2018.M-3-02

2018 International Conference on Solid State Devices and Materials

[M-3-02] Contact Resistivities at Graphene/MoS2 Lateral Heterojunctions

[M-3-02] Contact Resistivities at Graphene/MoS₂ Lateral Heterojunctions