Gap Width Dependence of Transport through Quantum Point Contact in hBN/Graphene/hBN in the Quantum Hall Regime

N.F. Ahmad

doi:https://doi.org/10.7567/SSDM.2018.M-5-01

13:30 〜 13:45

[M-5-01] Gap Width Dependence of Transport through Quantum Point Contact in hBN/Graphene/hBN in the Quantum Hall Regime

^○N.F. Ahmad^1,2, K. Komatsu², S. Moriyama², Y. Morita³, K. Watanabe², T. Taniguchi², A.M. Hashim¹, Y. Wakayama², S. Nakaharai² (1.Universiti Teknologi Malaysia (Malaysia), 2.NIMS (Japan), 3.Gunma University (Japan))

https://doi.org/10.7567/SSDM.2018.M-5-01

2018 International Conference on Solid State Devices and Materials

[M-5-01] Gap Width Dependence of Transport through Quantum Point Contact in hBN/Graphene/hBN in the Quantum Hall Regime