Ternary Graphene Field Effect Transistors using Chemically doped Graphene

S.Y. Kim

doi:https://doi.org/10.7567/SSDM.2018.M-5-04

14:15 〜 14:30

[M-5-04] Ternary Graphene Field Effect Transistors using Chemically doped Graphene

^○S.Y. Kim^1,2, M.B. Kim^1,2, H.J. Hwang¹, B. Allouche¹, B.H. Lee^1,2 (1.Center for Emerging Electric Devices and Systems, GIST (Korea), 2.School of Material Sci. and Eng., GIST (Korea))

https://doi.org/10.7567/SSDM.2018.M-5-04

2018 International Conference on Solid State Devices and Materials

[M-5-04] Ternary Graphene Field Effect Transistors using Chemically doped Graphene