15:00 〜 15:15

[N-1-04] Junctionless ferroelectric FET with doped HfO₂ on n⁺-TiO₂for three-terminal nonvolatile switch

L. Xu¹, S. Shibayama¹, T. Nishimura¹, T. Yajima¹, S. Migita²,^○A. Toriumi¹ (1.Univ. of Tokyo (Japan), 2.AIST (Japan))

https://doi.org/10.7567/SSDM.2018.N-1-04