10:15 〜 10:30

[N-3-05 (Late News)] Activation and Defect Reduction of Hydrogenated In–Ga–Zn–O Thin Film Transistor at Low Temperature (150 °C)

^○S.G.M. Aman¹, Y. Hirota¹, Y. Magari¹, M. Furuta¹ (1.Kochi University of Technology (Japan))

https://doi.org/10.7567/SSDM.2018.N-3-05