SiC Dots in Amorphous-Si and Poly-Si Substrates Fabricated by Hot-C<sup>+</sup>-Ion Implantation

16:00 〜 16:15

[N-6-03] SiC Dots in Amorphous-Si and Poly-Si Substrates Fabricated by Hot-C⁺-Ion Implantation

^○T. Mizuno¹, R. Kanazawa¹, Y. Omata¹, T. Aoki¹, T. Sameshima² (1.Kanagawa Univ. (Japan), 2.Tokyo Univ. of Agric. and Tech. (Japan))