4:00 PM - 4:15 PM

[N-6-03] SiC Dots in Amorphous-Si and Poly-Si Substrates Fabricated by Hot-C⁺-Ion Implantation

^○T. Mizuno¹, R. Kanazawa¹, Y. Omata¹, T. Aoki¹, T. Sameshima² (1.Kanagawa Univ. (Japan), 2.Tokyo Univ. of Agric. and Tech. (Japan))

https://doi.org/10.7567/SSDM.2018.N-6-03