11:00 AM - 1:30 PM
[PS-1-01] Grain-Boundary-Limited Polycrystalline-Silicon Mobility with Negative Temperature Dependence ~ Modeling of Carrier Conduction through Grain-Boundary Traps Based on Trap-Assisted Tunneling ~
○M. Hogyoku1, T. Izumida1, H. Tanimoto1, N. Aoki1, S. Onoue1
(1.Toshiba Memory Corp. (Japan))
https://doi.org/10.7567/SSDM.2018.PS-1-01