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[PS-1-12] Ambipolar operation of asymmetric Ge Schottky tunneling source field-effect transistor fabricated on Ge-on-Insulator

^○K. Yamamoto¹, K. Nakae¹, D. Wang¹, H. Nakashima¹, Z. Xue², M. Zhang², Z. Di² (1.Kyushu Univ. (Japan), 2.Chinese Academy of Sci. (China))

https://doi.org/10.7567/SSDM.2018.PS-1-12