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[PS-1-15] Significant Improvement in Electrical Characteristics of FinFETs by Trilayer High-k Gate Dielectric

^○S.H. Hsu¹, K.S. Chang-Liao¹, Y.L. Li¹, C.H. Huang¹, D.B. Ruan¹, S.F. Tsai¹, M.Y. Chen¹ (1.National Tsing Hua University (Taiwan))

https://doi.org/10.7567/SSDM.2018.PS-1-15