The Japan Society of Applied Physics

11:00 〜 13:30

[PS-1-15] Significant Improvement in Electrical Characteristics of FinFETs by Trilayer High-k Gate Dielectric

S.H. Hsu1, K.S. Chang-Liao1, Y.L. Li1, C.H. Huang1, D.B. Ruan1, S.F. Tsai1, M.Y. Chen1 (1.National Tsing Hua University (Taiwan))

https://doi.org/10.7567/SSDM.2018.PS-1-15