11:00 〜 13:30

[PS-1-17] Steep Switching Less Than 15 mV/decade in Silicon-on-Insulator Tunnel FETs by Trimmed-Gate Structure

^○H. Asai¹, T. Mori¹, T. Matsukawa¹, J. Hattori¹, K. Endo¹, K. Fukuda¹ (1.AIST (Japan))

https://doi.org/10.7567/SSDM.2018.PS-1-17