11:00 AM - 1:30 PM

[PS-1-18] High Performance NiGe/n-Ge Junctions and pMOSFETs Fabricated with Dopant Segregation

^○S. Yuan¹, J. Li¹, R. Zhang¹, Y. Zhao¹ (1.Zhejiang University (China))

https://doi.org/10.7567/SSDM.2018.PS-1-18