Improvement of Interface Properties of Ge-MISFET with Crystalline La2O3 high-k/Ge(111) Gate Stacks by Wet Treatments

T. Kanashima

doi:https://doi.org/10.7567/SSDM.2018.PS-1-24

11:00 〜 13:30

[PS-1-24] Improvement of Interface Properties of Ge-MISFET with Crystalline La₂O₃ high-k/Ge(111) Gate Stacks by Wet Treatments

^○T. Kanashima¹, H. Furusho¹, K. Takayama¹, H. Nohira², K. Yamamoto³, H. Nakashima³ (1.Osaka Univ. (Japan), 2.Tokyo City Univ. (Japan), 3.Kyushu Univ. (Japan))

https://doi.org/10.7567/SSDM.2018.PS-1-24

2018 International Conference on Solid State Devices and Materials

[PS-1-24] Improvement of Interface Properties of Ge-MISFET with Crystalline La2O3 high-k/Ge(111) Gate Stacks by Wet Treatments

[PS-1-24] Improvement of Interface Properties of Ge-MISFET with Crystalline La₂O₃ high-k/Ge(111) Gate Stacks by Wet Treatments