The Japan Society of Applied Physics

11:00 〜 13:30

[PS-1-29 (Late News)] Improvement of ION and S.S. values of p-GaAs0.51Sb0.49/In0.53Ga0.47As hetero-junction vertical TFETs by using abrupt source impurity profile

T. Gotow1, M. Mitsuhara2, T. Hoshi2, H. Sugiyama2, M. Takenaka1, S. Takagi1 (1.The University of Tokyo (Japan), 2.NTT Device Tech. Lab. (Japan))

https://doi.org/10.7567/SSDM.2018.PS-1-29