Loading Effect in the Channel Etching Process of Crystalline In-Ga-Zn-Oxide FETs

R. Arasawa

doi:https://doi.org/10.7567/SSDM.2018.PS-10-02

11:00 〜 13:30

[PS-10-02] Loading Effect in the Channel Etching Process of Crystalline In-Ga-Zn-Oxide FETs

^○R. Arasawa¹, S. Sasagawa¹, E. Takahashi¹, K. Tochibayashi¹, Y. Komatsu¹, S. Ito¹, K. Fukushima¹, R. Hodo¹, S. Yamazaki¹ (1.Semiconductor Energy Laboratory Co., Ltd. (Japan))

https://doi.org/10.7567/SSDM.2018.PS-10-02

2018 International Conference on Solid State Devices and Materials

[PS-10-02] Loading Effect in the Channel Etching Process of Crystalline In-Ga-Zn-Oxide FETs