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[PS-10-04] Improved Electrical Stability of Zr-IGZO Thin-Film Transistors with Zr_0.85Si_0.15O₂ Gate Dielectric

Z.K. Zhuang¹, S.J. Wang¹, S.Y. Wang¹, H.Y. Chen¹,^○C.K. Liao¹, S.T. Hsiao¹, B.C. You¹, R.M. Ko¹ (1.Univ. of Cheng Kung (Taiwan))

https://doi.org/10.7567/SSDM.2018.PS-10-04