Conduction and valence band offsets of ZnO/β-Ga<sub>2</sub>O<sub>3 </sub>interface measured by X-ray photoelectron spectroscopy

S.M. Sun

doi:https://doi.org/10.7567/SSDM.2018.PS-10-09

11:00 〜 13:30

[PS-10-09] Conduction and valence band offsets of ZnO/β-Ga₂O₃interface measured by X-ray photoelectron spectroscopy

^○S.M. Sun¹, W.J. Liu¹, Y.P. Wang¹, Y.W. Huan¹, H. Liu¹, Y. Shao¹, B. Zhu¹, R.H. Horng², C.T. Xia³, S.J. Ding¹, D.W. Zhang¹ (1.Fudan Univ. (China), 2.National Chiao Tung Univ. (Taiwan), 3.Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences (China))

https://doi.org/10.7567/SSDM.2018.PS-10-09

2018 International Conference on Solid State Devices and Materials

[PS-10-09] Conduction and valence band offsets of ZnO/β-Ga2O3 interface measured by X-ray photoelectron spectroscopy

[PS-10-09] Conduction and valence band offsets of ZnO/β-Ga₂O₃interface measured by X-ray photoelectron spectroscopy