The Japan Society of Applied Physics

11:00 AM - 1:30 PM

[PS-11-01] Growth of Single-Crystal (0001) GaN Films on (0001) Sapphire Substrates Using h-BN Buffer Layers by Molecular Beam Epitaxy

Y. Kobayashi1, K. Nakata1, H. Nakazawa1, H. Okamoto1, M. Hiroki2, K. Kumakura2 (1.Hirosaki Univ. (Japan), 2.NTT Basic Res. Lab. (Japan))

https://doi.org/10.7567/SSDM.2018.PS-11-01