11:00 AM - 1:30 PM

[PS-2-06] Material Design of In₃SbTe₂ for Fast Switching Phase Change Memory

Y.T. Kim¹,^○Y.M. Jhon¹, S. Kwon², J. Ahn² (1.Korea Institute of Science & Tech. (Korea), 2.Hanyang Univ. (Korea))

https://doi.org/10.7567/SSDM.2018.PS-2-06