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[PS-2-07] Ferroelectric HfO₂ Formation by Annealing of HfO₂/Hf/HfO₂/Si(100) Stacked Structure

^○M.G. Kim¹, H. Inoue¹, S. Ohmi¹ (1.Tokyo Tech (Japan))

https://doi.org/10.7567/SSDM.2018.PS-2-07