11:00 〜 13:30

[PS-2-07] Ferroelectric HfO₂ Formation by Annealing of HfO₂/Hf/HfO₂/Si(100) Stacked Structure

^○M.G. Kim¹, H. Inoue¹, S. Ohmi¹ (1.Tokyo Tech (Japan))

https://doi.org/10.7567/SSDM.2018.PS-2-07