Doping-Less 1T-DRAM with Schottky Barrier Contact for Low Power Application

W.T. Sun

doi:https://doi.org/10.7567/SSDM.2018.PS-2-08

11:00 AM - 1:30 PM

[PS-2-08] Doping-Less 1T-DRAM with Schottky Barrier Contact for Low Power Application

^○W.T. Sun¹, J.T. Lin¹, H.H. Lin¹, Y.J. Chen¹, A. Kranti² (1.National Sun Yat-sen University (Taiwan), 2.Indian Institute of Technology Indore (India))

https://doi.org/10.7567/SSDM.2018.PS-2-08

2018 International Conference on Solid State Devices and Materials

[PS-2-08] Doping-Less 1T-DRAM with Schottky Barrier Contact for Low Power Application