Effects of Si Content in Si3N4/ZrO2 Stacked Trapping Layer on Operation Characteristics of Poly-Si Gate-All-Around Charge-Trapping Flash Memory Devices

11:00 AM - 1:30 PM

[PS-2-14] Effects of Si Content in Si₃N₄/ZrO₂ Stacked Trapping Layer on Operation Characteristics of Poly-Si Gate-All-Around Charge-Trapping Flash Memory Devices

^○J.C. Yeh¹, K.S. Chang-Liao¹, H.K. Fang¹, P.G. Wu¹ (1.National Tsing Hua University (Taiwan))