11:00 AM - 1:30 PM
[PS-2-14] Effects of Si Content in Si3N4/ZrO2 Stacked Trapping Layer on Operation Characteristics of Poly-Si Gate-All-Around Charge-Trapping Flash Memory Devices
○J.C. Yeh1, K.S. Chang-Liao1, H.K. Fang1, P.G. Wu1
(1.National Tsing Hua University (Taiwan))
https://doi.org/10.7567/SSDM.2018.PS-2-14